IndiumV3, Russie, Analysis, bibRecord, 000486

Effect of crystal defects on the electrical behaviour of InP and sige epitaxial structures

Identifieur interne : 000486 ( Russie/Analysis ); précédent : 000485; suivant : 000487

Effect of crystal defects on the electrical behaviour of InP and sige epitaxial structures

Auteurs : RBID : Pascal:05-0019178

Descripteurs français

Pascal (Inist)
- Défaut cristallin, Relation structure propriété, Indium phosphure, Composé binaire, Couche épitaxique, Silicium Germaniure, Hétérostructure, Dislocation interfaciale, Dislocation, Courant fuite, Dépendance température, Hauteur barrière, Mesure électrique, Etude expérimentale, InP, In P, 7330, 7340G, 7320H.

English descriptors

KwdEn :
- Barrier height, Binary compounds, Crystal defects, Dislocations, Electrical measurement, Epitaxial layers, Experimental study, Heterostructures, Indium phosphides, Leakage currents, Misfit dislocations, Property structure relationship, Silicon Germanides, Temperature dependence.

Abstract

The defects in InP epitaxial structures (containing in part Pt nanoparticles) and SiGe/Si heterostructures, and their electrical behaviour are studied. In InP structures pinholes, in SiGe/Si structures misfit dislocations were observed in the epitaxial layers. These defects yielded different anomalies of the electrical behaviour, as excess and leakage currents. instabilities, anomalous temperature dependence and anomalous apparent barrier height. It is shown that inspite of anomalies, the electrical measurements provide useful and reliable information about, the structures.

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Pascal:05-0019178

Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barrier height</term>
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<term>Dislocations</term>
<term>Electrical measurement</term>
<term>Epitaxial layers</term>
<term>Experimental study</term>
<term>Heterostructures</term>
<term>Indium phosphides</term>
<term>Leakage currents</term>
<term>Misfit dislocations</term>
<term>Property structure relationship</term>
<term>Silicon Germanides</term>
<term>Temperature dependence</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Défaut cristallin</term>
<term>Relation structure propriété</term>
<term>Indium phosphure</term>
<term>Composé binaire</term>
<term>Couche épitaxique</term>
<term>Silicium Germaniure</term>
<term>Hétérostructure</term>
<term>Dislocation interfaciale</term>
<term>Dislocation</term>
<term>Courant fuite</term>
<term>Dépendance température</term>
<term>Hauteur barrière</term>
<term>Mesure électrique</term>
<term>Etude expérimentale</term>
<term>InP</term>
<term>In P</term>
<term>7330</term>
<term>7340G</term>
<term>7320H</term>
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<front><div type="abstract" xml:lang="en">The defects in InP epitaxial structures (containing in part Pt nanoparticles) and SiGe/Si heterostructures, and their electrical behaviour are studied. In InP structures pinholes, in SiGe/Si structures misfit dislocations were observed in the epitaxial layers. These defects yielded different anomalies of the electrical behaviour, as excess and leakage currents. instabilities, anomalous temperature dependence and anomalous apparent barrier height. It is shown that inspite of anomalies, the electrical measurements provide useful and reliable information about, the structures.</div>
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<fC01 i1="01" l="ENG"><s0>The defects in InP epitaxial structures (containing in part Pt nanoparticles) and SiGe/Si heterostructures, and their electrical behaviour are studied. In InP structures pinholes, in SiGe/Si structures misfit dislocations were observed in the epitaxial layers. These defects yielded different anomalies of the electrical behaviour, as excess and leakage currents. instabilities, anomalous temperature dependence and anomalous apparent barrier height. It is shown that inspite of anomalies, the electrical measurements provide useful and reliable information about, the structures.</s0>
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<fC02 i1="03" i2="3"><s0>001B70C20H</s0>
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<s5>51</s5>
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<s2>NA</s2>
<s5>55</s5>
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<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
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<s5>57</s5>
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<s5>58</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Dislocations</s0>
<s5>58</s5>
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<s5>59</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Leakage currents</s0>
<s5>59</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>Dépendance température</s0>
<s5>60</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>60</s5>
</fC03>
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<s5>61</s5>
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<s5>61</s5>
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<s5>75</s5>
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<s5>91</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>7340G</s0>
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<s5>92</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>7320H</s0>
<s2>PAC</s2>
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<fN21><s1>010</s1>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Defects: Recognition, Imaging and Physics in Semiconductors</s1>
<s2>10</s2>
<s3>Batz-sur-Mer FRA</s3>
<s4>2003-09-29</s4>
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Effect of crystal defects on the electrical behaviour of InP and sige epitaxial structures

Effect of crystal defects on the electrical behaviour of InP and sige epitaxial structures

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English descriptors

Abstract

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